SGTMOS苏州0033990威尼斯半导体股份有限公司

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SGTMOS

Oriental Semiconductor’s SFGMOS Series MOSFET adopts Semi-Floating Gate structure, which combines the advantages of traditional planar structure and SGT structure of power MOSFET, and has the advantages of higher process stability and reliability, faster switching speed, smaller gate charge and higher application efficiency. SFGMOS Series MOSFET products cover the whole series of 20V~200V, which can be widely used in motor driver, synchronous rectification, etc.

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Package	P/N	Cfg.	V_DS (V)	V_GS (V)	ID (A)	V_{th_typ}(V)	R_on (Ω)
Package	P/N	Cfg.	V_DS (V)	V_GS (V)	T_c=25℃	V_{th_typ}(V)	10V	4.5V
All TO-251 TO-263 TO-262 TO-252 TO-220 PDFN56 TO-220F SOP8 TO-247 PDFN3.33.3 TOLL TO-263-6L STOLL TO-220F_NL PDFN56-LL DSCQFN5×6 TOLT PDFN3.33.3DSC		All N Dual N P	All 25 40 60 80 100 120 150 75 30 -40 45 250 200	All 30 20 15 -8/+22 -20 12 -10/+23

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封装	料号	配置	VDS (V)	VGS (V)	ID (A) TA=25	Vth_typ(V)	Ron (Ω) 10V	Ron (Ω) 4.5V

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ShenZhen

Address：Floor 5, Building N2, 2.5 Industrial Park, No.88, Dongchang Road, Suzhou Industrial Park
Phone：+86 512-6253 4962
E-mail：yue.miao@tsebattery.com (Miao Yue)

Address：No.1201B TianMing KeJi building, No.8 WuShiTou Rd. NanShan District, ShenZhen
Phone：+86 755 8322 9660
E-mail：robin.lu@tsebattery.com (Robin)